Analysis of semiconducting materials by high-resolution radiofrequency glow discharge mass spectrometry

The analytical capabilities of a high-resolution mass spectrometer in combination with a 13.56 MHz glow discharge ion source for the analysis of semiconducting materials (silicon carbide and gallium arsenide) were studied. It was shown that single positively charged ions of sample material have about 10 eV higher average energy than the ions of the discharge and residual gas. Therefore effective energy separation of the ions of analyte from the ions of the discharge and residual gas was achieved by adjusting the ion transfer optics (breadth and position of energy slit), which improves the analytical capabilities of the developed method.Some analytical applications are presented to illustrate the performance of r.f. GDMS for the bulk analysis of semiconducting materials. The results of the trace element analysis of gallium arsenide and silicon carbide samples are compared with data of independent methods (LIMS, ICP-AES, SIMS).Dedicated to Professor Dr. rer. nat. Dr. h.c. Hubertus Nickel on the occasion of his 65th birthdayOn leave from the Institute of Inorganic Chemistry, 630090 Novosibirsk, Russia     

Towards cooling of high-intensity ion beams

Buffer gas beam coolers may become excellent beam preparation devices for high-resolution mass separation. The small beam emittance provided makes efficient isobar resolution a realistic goal. In order to fulfill the needs of future facilities providing high-intensity beams of rare isotopes, it is desirable to increase the beam intensity limit of such devices from typically several tens of nanoamperes to microamperes. This requires the usage of high-voltage radiofrequencies in a low-pressure gas environment. A buffer gas beam cooler, dedicated to this purpose, is under development at the NSCL. The study of voltage breakdowns under such conditions and the design of an electrode system minimizing them is mandatory.      

Phase transformation of Ni-B, Ni-P diffusion barrier deposited electrolessly on Cu interconnect

In this paper, we report that the phase transformation of Ni-B, Ni-P diffusion barriers deposited electrolessly on Cu, for the reason that the Ni-P layer is a more effective diffusion barrier than the Ni-B layer. The Ni₃B crystallized was decomposed to Ni and B₂O₃ above 400 °C and the Ni₃P crystallized was decomposed to Ni and P₂O₅ above 600 °C respectively in Ar atmosphere. Also, the Ni₃B was decomposed to Ni and free B above 400 °C and the Ni₃P was decomposed to Ni and free P above 600 °C respectively in H₂ atmosphere. The decomposed Ni formed a solid solution with Cu. The Cu diffusion occurred above 400 °C for Ni-B layer and above 600 °C for Ni-P layer, respectively. Because the decomposition temperature of Ni-P layer is about 200 °C higher than that of Ni-B layer, the Ni-P layer is a more effective barrier for Cu than the Ni-B layer.     

Dielectric and conduction mechanism studies of PVA-orthophosphoric acid polymer electrolyte

Polyvinyl alcohol (PVA)-based proton conducting polymer electrolytes have been prepared by the solution cast technique. The conductivity is observed to increase from 10⁻⁹ to 10⁻⁴ S cm⁻¹ as a result of orthophosphoric acid (H₃PO₄) addition. The plot of conductivity vs temperature shows that a phase transition occurred at 343 K in the sample PVA-33 wt% H₃PO₄. The β-relaxation peak is observed at 313 K. The glass transition temperature of PVA-33 wt% H₃PO₄ is 343 K. Orthophosphoric acid seems to play a dual role, i.e., as a proton source and as a plasticizer. The ac conductivity σ _ac = Aω ^s was also calculated in the temperature range from 303 to 353 K. The conduction mechanism was inferred by plotting the graph of s vs T from which the conduction mechanism for sample PVA-17 wt% H₃PO₄ was inferred to occur by way of the overlapping large polaron tunneling (OLPT) model and the conduction mechanism for the sample PVA-33 wt% H₃PO₄ by way of the correlated barrier height (CBH) model.     

Preparation and electrical characterization of (PVC + KBrO3) polymer electrolytes for solid state battery applications

This paper presents results of studies on dc electrical conductivity and transference number measurements on potassium bromate (KBrO₃) complexed polyvinyl chloride (PVC) films prepared by solution cast technique. Temperature dependence of dc electrical conductivity and transference number data indicated the dominance of ion type charge transport in these specimens. The magnitude of conductivity increased with increase in concentration of the salt and temperature. Using this (PVC + KBrO₃) electrolyte, solid-state electrochemical cells were fabricated, and their discharge profiles were studied under a constant load of 100 kΩ. Several cell profiles such as open circuit voltage, short circuit current, power density, and energy density associated with these cells were evaluated and were reported. The features of complexation of the electrolytes were studied by X-ray diffraction and Fourier transform infrared spectroscopy. Paper presented at the Third International Conference on Ionic Devices (ICID 2006), Chennai, Tamilnadu, India, Dec. 7–9, 2006     

Chaotic-to-ordered state transition of cathode-sheath instabilities in DC glow discharge plasmas

Transition from chaotic to ordered state has been observed during the initial stage of a discharge in a cylindrical DC glow discharge plasma. Initially it shows a chaotic behavior but increasing the discharge voltage changes the characteristics of the discharge glow and shows a period subtraction of order 7 period → 5 period → 3 period → 1 period, i.e. the system goes to single mode through odd cycle subtraction. On further increasing the discharge voltage, the system goes through period doubling, like 1 period → 2 period → 4 period. On further increasing the voltage, the system goes to stable state through two period subtraction, like 4 period → 2 period → stable.     

Three-body problem in the theory of the dielectric constant

We study the corrections to the Clausius-Mossotti formula for the dielectric constant of a disordered system of polarizable spherical particles. Previously we have derived an exact cluster expansion for the correction terms. Here we study the three-body correction in detail. We derive an explicit expression for the integrand of the three-body cluster integral for a system of polarizable point dipoles.     

Conic Formulation for l p -Norm Optimization

In this paper, we formulate the l _p -norm optimization problem as a conic optimization problem, derive its duality properties (weak duality, zero duality gap, and primal attainment) using standard conic duality and show how it can be solved in polynomial time applying the framework of interior-point algorithms based on self-concordant barriers.     

The non-isotropic character of electric and dielectric properties of ammonium zinc chloride crystal

The dielectric constant, ε, and the d.c. conductivity, σ, were measured along the a-, b- and c-axes of (NH₄)₂ZnCl₄ (AZC) crystal in the 300-450 K temperature range. Crystals of AZC grown from aqueous solutions containing excess of ZnCl₂ were used. The value of the dielectric permittivity of AZC is extremely small compared to other ferroelectric crystals. Pronounced broad or step-like peaks at the phase transition temperatures were detected along the a- and b-axes, while ε along the c-axis is temperature independent up to the end of the measuring range. Reciprocal of the dielectric permittivity in the range of the commensurate to incommensurate phase transition obeys a relation similar to the Curie-Weiss law that is valid for second order ferroelectric/paraelectric phase transitions. The constants of the proposed relationship applied to the cooling run are given. The J-E characteristics along the three crystallographic axes were measured in the normal, incommensurate, commensurate and antiferroelectric phases. Hence, the type of conduction mechanism has been estimated. Parameters of Poole-Frenkel and Richardson-Schottky types of conduction mechanism have been determined. The effect of applied electric field on the conductivity measurement was also tested. Conductivity anomalies with different character were observed at the phase transition temperatures. The lnσ−1000/T dependence revealed thermal activation energy of conduction along the a-, b- and c-axes with different values in different phases of AZC.     

A boundary element method for the calculation of noise barrier insertion loss in the presence of atmospheric turbulence

Atmospheric turbulence is an important factor that limits the amount of attenuation a barrier can provide in the outdoor environment. It is therefore important to develop a reliable method to predict its effect on barrier performance. The boundary element method (BEM) has been shown to be a very effective technique for predicting barrier insertion loss in the absence of turbulence. This paper develops a simple and efficient modification of the BEM formulation to predict the insertion loss of a barrier in the presence of atmospheric turbulence. The modification is based on two alternative methods: (1) random realisations of log-amplitude and phase fluctuations of boundary sources and (2) de-correlation of source coherence using the mutual coherence function (MCF). An investigation into the behaviours of these two methods is carried out and simplified forms of the methods developed. Some systematic differences between the predictions from the methods are found. When incorporated into the BEM formulation, the method of random realisations and the method of MCF de-correlation provide predictions that agree well with predictions by the parabolic equation method and by the scattering cross-section method on a variety of thin barrier configurations.